1 MAC12SM, mac12sn sensitive gate triacs silicon bidirectional thyristors designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. ? sensitive gate allows triggering by microcontrollers and other logic circuits ? blocking voltage to 800 volts ? on-state current rating of 12 amperes rms at 70 c ? high surge current capability - 90 amperes ? rugged, economical to220ab package ? glass passivated junctions for reliability and uniformity ? maximum values of i gt , v gt and i h specified for ease of design ? high commutating di/dt - 8.0 a/ms minimum at 110 c ? immunity to dv/dt - 15 v/ sec minimum at 110 c ? operational in three quadrants: q1, q2, and q3 ? device marking: logo, device type, e.g., MAC12SM, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off-state voltage (note 1) (t j = -40 to 110 c, sine wave, 50 to 60 hz, gate open) MAC12SM mac12sn v drm, v rrm 600 800 v on-state rms current (all conduction angles; t c = 70 c) i t(rms) 12 a peak non-repetitive surge current (one full cycle sine wave, 60 hz, t j = 110 c) i tsm 90 a circuit fusing consideration (t = 8.33 ms) i 2 t 33 a 2 sec peak gate power (pulse width = 1.0 sec, t c = 70 c) p gm 16 w average gate power (t = 8.3 msec, t c = 70 c) p g(av) 0.35 w operating junction temperature range t j - 40 to 110 c storage temperature range t stg - 40 to 150 c triacs 12 amperes rms 600 thru 800 volts device package shipping ordering information MAC12SM to220ab 50 units/rail mac12sn to220ab to-220ab case 221a style 4 1 2 3 4 pin assignment 1 2 3 gate main terminal 1 main terminal 2 4 main terminal 2 www.kersemi.com 50 units/rail mt1 g mt2 marking diagram xx = specific device code a = assembly location l = wafer lot y = year ww = work week mac12xx alyww
MAC12SM, mac12sn 2 thermal characteristics characteristic symbol value unit thermal resistance - junction to case - junction to ambient r jc r ja 2.2 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current (v d = rated v drm , v rrm ; gate open) t j = 25 c t j = 110 c i drm , i rrm - - - - 0.01 2.0 ma on characteristics peak on-state voltage (1) (i tm = 17 a) v tm - - 1.85 v gate trigger current (continuous dc) (v d = 12 v, r l = 100 ) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) i gt - - - 1.5 2.5 2.7 5.0 5.0 5.0 ma holding current (v d = 12 v, gate open, initiating current = 200 ma) i h - 2.5 10 ma latching current (v d = 12 v, i g = 5 ma) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) i l - - - 3.0 5.0 3.0 15 20 15 ma gate trigger voltage (continuous dc) (v d = 12 v, r l = 100 ) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) v gt 0.45 0.45 0.45 0.68 0.62 0.67 1.5 1.5 1.5 v dynamic characteristics critical rate of change of commutating current (v d = 400 v, i tm = 3.5 a, commutating dv/dt = 10 v/ s, gate open, t j = 110 c, f = 500 hz, snubber: cs = 0.01 f, rs = 15 ) (di/dt) c 8.0 10 - a/ms critical rate of rise of off-state voltage (v d = 67% v drm , exponential waveform, r gk = 1 k , t j = 110 c) dv/dt 15 40 - v/ s repetitive critical rate of rise of on-state current ipk = 50 a; pw = 40 sec; dig/dt = 1 a/ sec; igt = 100 ma; f = 60 hz di/dt - - 10 a/ s 2. pulse test: pulse width 2.0 ms, duty cycle 2%. www.kersemi.com
MAC12SM, mac12sn 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blocking current v rrm peak repetitive reverse off state voltage i rrm peak reverse blocking current voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 mainterminal 2 + quadrant 3 mainterminal 2 - v tm i h v tm maximum on state voltage i h holding current mt1 (+) i gt gate (+) mt2 ref mt1 (-) i gt gate (+) mt2 ref mt1 (+) i gt gate (-) mt2 ref mt1 (-) i gt gate (-) mt2 ref - mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a triac i gt - + i gt all polarities are referenced to mt1. with in-phase signals (using standard ac lines) quadrants i and iii are used. www.kersemi.com
MAC12SM, mac12sn 4 180 dc q2 q1 30 t j , junction temperature ( c) figure 1. typical gate trigger current versus junction temperature t j , junction temperature ( c) i gt , gate trigger current (ma) v gt , gate trigger voltage (volts) - 40 - 10 20 50 80 110 100 1 0.85 0.40 q3 figure 2. typical gate trigger voltage versus junction temperature , latching current (ma) t j , junction temperature ( c) , holding current (ma) t j , junction temperature ( c) figure 3. typical latching current versus junction temperature figure 4. typical holding current versus junction temperature - 25 5 35 65 95 10 100 1 10 100 0.1 10 - 40 - 10 20 50 80 110 - 25 5 35 65 95 - 40 - 10 20 50 80 110 - 25 5 35 65 95 0.50 0.60 0.70 0.75 0.80 - 40 - 10 20 50 80 110 - 25 5 35 65 95 figure 5. typical rms current derating i t(rms) , rms on-state current (amps) 110 90 80 70 8 6 4 2 0 t c , case temperature ( c) figure 6. on-state power dissipation i t(av) , average on-state current (amps) 12 8 6 2 0 20 15 5 10 p (av) , average power dissipation (watts) 0 60 25 i h mt2 positive mt2 negative q2 q1 i l q3 q2 q1 12 10 30 , 60 90 180 dc 120 0.90 10 4 0.1 0.45 0.55 0.65 q3 0.1 1 100 90 60 www.kersemi.com
MAC12SM, mac12sn 5 figure 7. typical on-state characteristics v t , instantaneous on-state voltage (volts) 100 0.5 i t , instantaneous on-state current (amps) 1.5 2.5 3.5 4.5 10 1 0.1 figure 8. typical thermal response t, time (ms) r(t), transient thermal resistance (normalized) 1 0.1 0.01 10000 1000 100 10 1 0.1 maximum @ t j = 110 c typical @ t j = 25 c maximum @ t j = 25 c www.kersemi.com
MAC12SM, mac12sn http://onsemi.com 6 package dimensions to-220ab case 221a-09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane -t- c s t u r j style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 www.kersemi.com
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